• 专利附录
  • 专利说明
  • 权利要求
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    • 专利摘要:
    A method of transferring a useful layer (3) onto a support (4) comprising the following steps of: - forming an embrittlement plane (2) by implanting light species into a first substrate (1), so as to forming a useful layer (3) between this plane and a surface of the first substrate (1); - Application of the support (4) on the surface of the first substrate (1) to form a fracture assembly (5) having two exposed faces (S1, S2); heat treatment of embrittlement of the assembly to be fractured (5); initiation and self-propagating propagation of a fracture wave in the first substrate (1) along the weakening plane (3). At least one of the faces (S1, S2) of the assembly to be fractured (5) is in intimate contact, on a contact zone, with an absorbing element (6a, 6b) capable of capturing and dissipating acoustic vibrations. emitted during initiation and / or propagation of the fracture wave.
    公开号:FR3020175A1
    申请号:FR1453400
    申请日:2014-04-16
    公开日:2015-10-23
    发明作者:Didier Landru；Oleg Kononchuk；Mohammed Nadia Ben；Damien Massy；Frederic Mazen；Francois Rieutord
    申请人:Commissariat a lEnergie Atomique CEA；Soitec SA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] FIELD OF THE INVENTION The present invention relates to a method for transferring a useful layer onto a support substrate. BACKGROUND OF THE INVENTION It is known from the state of the art a method of transferring a useful layer 3 onto a support substrate 4, shown in FIG. 1, this method comprising the following main steps: in a step a), the formation of an embrittlement plane 2 by implantation of light species in a first substrate 1 so as to form a useful layer 3 between this plane and a surface of the first substrate; in a step b), the application of the support 4 on the surface of the first substrate 1 to form a fracturing assembly 5 having two exposed faces S1, S2; in a step c), the embrittlement heat treatment of the assembly to be fractured 5; in a step d), initiation and self-propagating propagation of a fracture wave in the first substrate 1 along the embrittlement plane 2. During this process, the implanted species are at the origin of the development microcavities. The embrittlement heat treatment has the effect of promoting the coalescence and pressurization of these microcavities. Under the effect of this heat treatment alone, or by means of additional external forces, the initiation and the self-sustained propagation of a fracture wave makes it possible to transfer the useful layer 3, by detachment at the level of the plane of embrittlement 2.
    [0002] This process, described in particular in documents WO2005043615 and WO2005043616 and designated by the name Smart Cu-Cm ', is in particular useful for the manufacture of silicon-on-insulator substrates. In this case, the first substrate 1 and the support 4 consist of a silicon wafer, and one or the other of the first substrate 1 and the support 4 are surface-oxidized. These silicon on insulator substrates must meet very precise specifications. This is particularly the case for the average thickness and thickness uniformity of the useful layer 3. Compliance with these specifications is required for the proper functioning of the semiconductor devices that will be formed in and on this useful layer 3 In some cases, the architecture of these semiconductor devices requires silicon-on-insulator substrates having an average thickness of the useful layer 3 which is very small, for example less than 50 nm, or even less than 10 nm. and a very constant thickness uniformity on the surface of the substrate (whose standardized diameter is typically 200mm, 300mm, and even 450mm for the next generations). The uniformity of thickness expected can thus be of the order of 1% at most, corresponding to maximum variations typically ranging from +/- 0.1 nm to +/- 1 nm over the entire surface of the wafer. It is customary, at the end of the "Smart Cut" process, to apply complementary finishing steps to the useful layer 3, such as engravings or surface smoothing heat treatments, in order to reach the level of specification expected. However, the Applicants of the present invention have observed the presence, after the fracture step, of thickness variations of the useful layer 3 with a very specific profile. These variations in thickness are indeed in the form of a periodic pattern whose amplitude is of the order of nm or half-nanometer and whose wavelength is of the order of mm, or even of cm. The periodic pattern may be apparent over the entire useful layer, or only a portion. This periodic pattern is thus visible on the thickness variation profile (in Angstrom) along a diameter of a useful layer of a silicon-on-insulator wafer 300 mm in diameter obtained according to the Smart CutTM process of the state of the art shown in Figure 2 in full line. It is particularly difficult to rectify this particular non-uniformity of thickness profile by the usual finishing techniques (etching, sacrificial oxidation, smoothing heat treatment) because they are not effective in the wavelength range that is present. these reasons. Consequently, this periodic pattern contributes to the non-uniformity of thickness of the useful layer 3 after the application of the finishing steps, which does not make it possible to reach the level of uniformity required, when this is important. . OBJECT OF THE INVENTION An object of the invention is to propose a method of transferring a useful layer to a support substrate, this useful layer having a periodic pattern of thickness variation whose amplitude is reduced. The studies carried out by the Applicants in the context of the present invention led to the conclusion that this periodic pattern originated in the interaction between the fracture wave and acoustic vibrations encountered in the assembly to be fractured. More specifically, the inventors of the present application have been able to determine that the initiation and / or propagation of the fracture wave could cause this set to vibrate. These vibrations, of the Lamb wave type, propagate without significant attenuation over distances comparable to the size of the substrates, and at a speed greater than the speed of the self-sustaining fracture wave. They are reflected at the ends of the assembly to be fractured, one or more times, which contributes to maintaining this acoustic vibration as a whole during propagation of the fracture wave. In the context of the present invention, the inventors have thus been able to determine that the modulation of the fracture wave by these acoustic vibrations was at the origin of the periodic pattern of variation of thickness observed on the useful layer at the end. of the process. BRIEF DESCRIPTION OF THE INVENTION With a view to achieving the above object, the object of the invention proposes a method of transferring a useful layer onto a support comprising the following steps: embrittlement by implantation of light species in a first substrate so as to form a useful layer between this plane and a surface of the first substrate; applying a support on the surface of the first substrate to form a fracturing assembly having two exposed faces; weakening heat treatment of the assembly to be fractured; initiation and self-propagating propagation of a fracture wave in the first substrate along the embrittlement plane. According to the invention, at least one of the faces of the assembly to be fractured is in intimate contact, on a contact zone, with an absorbent element capable of capturing and dissipating the acoustic vibrations emitted during the initiation. and / or the propagation of the fracture wave.
    [0003] At least a part of the acoustic vibrations emitted being absorbed by the absorbent element, the interaction of these acoustic vibrations with the fracture wave is less, and the useful layer has a periodic pattern of variation in thickness of reduced amplitude. According to other advantageous and nonlimiting features of the invention, taken alone or in combination: the acoustic vibrations have a main frequency, and the absorbing element is chosen to capture and dissipate the acoustic waves at this main frequency. the contact zone extends over part of the extent of the face of the assembly to be fractured. The contact zone is positioned on the face of the assembly to be fractured with respect to the zone of initiation of the fracture wave. The initiation of the fracture wave is obtained during the embrittlement heat treatment step. the initiation of the fracture wave is obtained by applying a mechanical force at the level of the embrittlement plane. the absorbent element is brought into intimate contact with the face of the assembly to be fractured after the heat treatment step and before the step of initiation of the fracture wave by application of a mechanical force. - A first and a second absorbent element are disposed on each of the faces of the assembly to be fractured. Intimate contact between the face of the assembly to be fractured and the absorbent element is obtained via a film disposed between the assembly to be fractured and the absorbent element. the film consists of an adhesive material. - The film is made of a non-adhesive material, low Young's modulus, less than 5GPa. the intimate contact between the face of the assembly to be fractured and the absorbent element is obtained by applying a pressure on the absorbent element. the face of the assembly to be fractured and the absorbent element have a surface roughness of less than 0.5 nm, the intimate contact between the face of the assembly to be fractured and the absorbent element is obtained by their direct assembly. the absorbent element consists of a material having a significant loss factor greater than 0.01. the absorbent element has a thickness greater than 1 mm. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be better understood in the light of the following description of particular non-limiting embodiments of the invention with reference to the attached figures in which: FIG. a useful layer on a support according to the prior art; FIG. 2 represents a thickness variation profile (in Angstrom) of a silicon wafer on insulator with a diameter of 300 mm in diameter from the prior art (solid line) and according to the invention (in dashed line); FIG. 3 represents a characterization bench 35 of an absorbent element to be evaluated; FIG. 4 represents a first embodiment of the invention; FIG. 5 represents a second embodiment of the invention; FIG. 6 represents a third mode of implementation of the invention.
    [0004] DETAILED DESCRIPTION OF THE INVENTION For the sake of simplification of the description to come, the same references are used for identical elements or ensuring the same function in the various exposed embodiments of the method, or in the method according to the state of the technique. As announced, the studies carried out by the applicants in the context of the present invention have led to the conclusion that the periodic pattern of thickness variation of a useful layer 3 transferred by the Smart Cut process of the state of the This technique originated in the interaction between the self-sustaining propagation of the fracture wave and the acoustic vibrations encountered in the assembly to be fractured. The fracture wave is indeed deviated vertically from its plane of progression according to the state of instantaneous stress of the material through which it passes. By self-sustaining fracture wave, it is meant that once initiated at an initiation zone, the fracture is propagated by itself, without the application of additional external force and over the whole extent of the plane of formation. embrittlement, so as to completely detach the useful layer from the first substrate 1. During the embrittlement heat treatment, energy is absorbed at the weakening plane, for example in the form of pressure within the microcavities which ... grow there. At the initiation of the fracture, the energy is released by spontaneously advancing the fracture front, leading to the formation of a self-sustaining fracture wave.
    [0005] The inventors of the present application have thus been able to determine, by providing the assembly to be fractured by piezoelectric sensors, that the acoustic vibrations take the form of Lamb waves. A Lamb wave is a mechanical wave propagating, almost without attenuation, in a thin slice of material, guided by the surfaces of the slice. The inventors have also observed during their experimentation that the characteristic quantities of these waves were determined by the parameters for obtaining the fracture wave. Thus, and by way of example, when the method of the state of the art of transfer of layer is obtained by: implantation of hydrogen species, with a dose of 5 10 ^ 16 species / cmA2 in a first substrate 1 constituted an oxidized silicon wafer; application of a support 4 consisting of a silicon wafer; embrittlement heat treatment conducted at 400 ° C for 4 hours during which the fracture wave initiates spontaneously. The acoustic vibrations measured are mainly AO mode Lamb waves and 2 MHz main frequency.
    [0006] When, in a second example, the embrittlement heat treatment is replaced by an annealing at 350 ° C. for 2 hours, and the initiation of the fracture wave caused by the application of an external mechanical force at the level of a zone of initiation, the measured acoustic vibrations are mainly Lamb waves of mode A0 and main frequency of 100kHz. In any case, the studies carried out during the elaboration of the present invention on the method of state of the art have established that acoustic vibrations are emitted during the initiation and / or the self-sustained propagation of the fracture wave in the assembly to be fractured 5, and that these acoustic vibrations were at the origin of the periodic pattern of variation of thickness of the useful layer 3.
    [0007] The invention therefore proposes periodic variations of less than one face Si, S2 of a support 4 arranged 1, an acoustic vibration absorbing element to reduce the amplitude of the thickness patterns, by providing on a fracture assembly 5, compound on a surface of a first substrate 6a, 6b adapted to capture and dissipate emissions during initiation and / or self-sustaining propagation of a fracture wave, as shown in FIG. by limiting the development of the acoustic vibrations in the fracturing assembly 5, the invention makes it possible to reduce the amplitude of the periodic pattern of thickness variation of the useful layer 3. In a very general manner, the use an absorbent member for attenuating the development of vibrations is widespread. And many forms and natures of this element are likely to be suitable in the application object of the present invention. In order for the absorbent element 6a, 6b to be capable of sensing the vibrations emitted in the assembly to be fractured, it may be advantageous to limit the reflections of the vibratory waves at the level of the contact zone between the assembly to be fractured 5 and the absorbent element 6a, 6b. To achieve this purpose, the absorbent element 6a, 6b can be chosen so that the latter has an acoustic impedance matched to that of the first substrate 1 and / or the support 4 on which it is arranged. If the first substrate 1 and the support substrate 4 are not of the same nature, and in the case where the face S1 of the assembly to be fractured 5 is provided with a first absorbent element 6a, and where the face S2 is provided with of a second absorbent element 6b, the first absorbent element 6a will have an acoustic impedance tuned to the acoustic impedance of the first substrate 1, and the second absorbent element 6b will have an acoustic impedance tuned to the acoustic impedance of the support 4.
    [0008] In addition, the absorbent member 6a, 6b should preferably be in intimate contact with the Si, S2 faces of the assembly to be fractured 5, in order to efficiently transmit the mechanical deformation of the plate to the absorber. Intimate contact means that the contact rate (ie the ratio between the surfaces in contact and the total area) must be high, for example greater than 70%. Various means can be implemented to achieve this intimate contact. It is possible to mention in particular: the use of an adhesive film, for example a polymeric adhesive, between the absorbent element and the assembly to be fractured; the use of a film with a low Young's modulus, less than 5GPa, and non-adhesive, such as for example an elastomer, between the absorbent element and the assembly to be fractured. In this case, the intimate contact can to be favored by subjecting the whole to compression efforts; the use of an electrostatically adhering film between the absorbent element 6a, 6b and the assembly to be fractured 5; - The assembly of the absorbent element 6a, 6b by molecular adhesion, the contact areas having been previously prepared to have a very low roughness (typically less than 0.5 nm); Depositing a layer of materials on the contact zone, this layer then forming the absorbent element 6a, 6b. On the other hand, the absorbent element 6a, 6b must also have characteristics ensuring that the sensed acoustic vibrations are properly dissipated. In general, a rigid absorbent element should be provided with a sufficient thickness to dissipate the acoustic vibrations, the absorption being then in the thickness of the absorbent element. Alternatively, the absorbent member 6a, 6b may be chosen to exhibit viscoelastic properties and have a loss factor of greater than 0.01. The energy of acoustic vibrations is effectively dissipated by viscous friction. For example, it may be polyurethane foam (40% density), silicone polymers or composite materials such as a polymer matrix containing dispersed particles of high densities or a composite material formed of a successive stacking of layers of viscoelastic materials and rigid materials (known as "sandwich configuration" or "constrained layer damping" in Anglo-Saxon denomination). The choice of the suitable absorbent element can be determined by means of a limited number of tests on a simple measuring bench to be produced, as shown in FIG. 3. In this figure, a blade 7 of representative material of the material constituting the assembly to be fractured, a few cm wide and about 10 cm long is maintained, for example, at its ends on two supports 8a and 8b. This blade 7 is provided, at a first end, with a piezoelectric element 9 connected to an electric generator 10, capable of applying to the blade 7 an acoustic vibration with certain characteristics. The blade is also provided at its other end with a piezoelectric sensor 11 capable of measuring the characteristics of the propagated acoustic vibrations. The main surface of the blade accommodates an absorbent member to be evaluated. The capture and dissipation characteristics of the absorbent member to be evaluated can thus be easily determined. A signal of controlled shape, frequency and amplitude is applied by means of the electric generator 10, generating an acoustic wave in the blade 7 provided with the absorbent element to be evaluated. signal representative of the acoustic wave that has propagated in the plate 12. It is then possible to represent, according to the frequency, the absorption coefficient of the absorbent element to be evaluated 12, defined as the ratio of the amplitude of the signal measured on the amplitude of the applied signal. With the aid of this test bench, it is very easy to determine the characteristics of capture and absorption of an absorbent element to be evaluated. In particular, and as has been seen previously, acoustic vibrations which In general, there is a main frequency which depends on the parameters of the layer transfer process used (nature and dose of the implanted species, temperature and duration of the embrittlement heat treatment, initiation mode of the fracture, etc.). The absorbent element must naturally be chosen to capture and dissipate the acoustic waves at this main frequency. Preferably, the absorbent element 6a, 6b is positioned on each of the exposed faces Si, S2 of the assembly to be fractured and the contact zone extends over the entire extent of each of these faces. This ensures maximum capture of the acoustic vibrations emitted. But it is also possible, to simplify the process according to the invention, to position the absorbent element 6a, 6b on a single exposed face Si, S2 of the assembly to be fractured 5. In this case, it may be preferred to positioned on the side of the first substrate 1, which generally, after transfer of the useful layer 3, is repackaged and reused as the first substrate in a new layer transfer process. The first substrate 1 could then be provided, permanently, the absorbent element 6a.
    [0009] That the absorbent element 6a, 6b is applied to one and / or the other of the exposed faces Si, S2 of the assembly to be fractured 5, the contact zone can extend over only a part of the extent of the exposed face (s) Si, S2 of the assembly to be fractured 5. This may be advantageous for facilitating removal of the absorbent element 6a, 6b at the end of the process. The contact zone may have a main dimension (length, diameter according to its shape) at least equal to the order of magnitude of the wavelength of the periodic pattern of thickness variation of the useful layer 3, for example between lmm and 100mm or more. It will thus be possible to position this contact zone with respect to the zone of initiation of the fracture wave. The acoustic vibrations are then captured and absorbed as soon as they are emitted. In the case where the initiation is caused by the application of an external force, the initiation zone corresponds to the point of impact of this effort on the assembly to be fractured 5. When the initiation of the fracture is spontaneous, it is generally positioned in a particular area of the assembly to be fractured 5 that can be determined in advance by experimentation and according to the conditions of implementation of the layer transfer method. Alternatively, the zone of contact between the absorbent element 6a, 6b and the exposed faces Si, S2 of the element to be fractured may be positioned at the periphery of the assembly to be fractured so as to capture the acoustic vibrations during After the characteristics of the absorbent element 6a, 6b have been determined, the invention is implemented according to several embodiments which are now described with reference to FIGS. to 6. In a first step a), shown in FIG. 4, an embrittlement plane is formed by implantation of light species into the first substrate 1. The first substrate 1 may be made of silicon, or any other semi-material -conductor or not. It may be, for example, germanium, gallium nitride, lithium tantalate, sapphire. Layers may have been deposited on the surface by deposition or heat treatment. It may be a layer of silicon dioxide, obtained by thermal oxidation of a silicon wafer or by epitaxial deposition of any kind: SiGe; InGaN; AlGaN, Ge, etc.
    [0010] As for the light species, it can be any species capable of weakening the first substrate 1 at its weakening plane. It may well be hydrogen species and / or helium.
    [0011] The weakening plane delimits with a surface of the first substrate the useful layer 3. In a second step b), a support 4 is then applied to the surface of the first substrate 1 to form the fracture assembly 5. The support may consist of a silicon wafer, or a substrate of any other material and of any shape, such as sapphire or glass. As for the first substrate 1, the support 4 may have been provided with surface layers of any kind.
    [0012] The application of the support on the surface of the first substrate can be carried out by any method of direct assembly: by molecular adhesion, by thermo-compression, by electrostatic bonding, etc. The application of the support 4 may also correspond to the deposition of a material on the surface of the first substrate 1, the deposited layer forming the support 4. In a following step c) and according to a first embodiment of the invention, the absorbent element or elements 6a, 6b are then placed in intimate contact with the exposed face Si, S2 of the assembly to be fractured 5. As mentioned above, the absorbent element 6a, 6b may be provided with an adhesive film or no (not shown in Figure 4) to promote the setting intimate contact. Intimate contact may also be promoted by contacting in a pressure environment below atmospheric pressure under a partial vacuum. This limits the appearance of air bubble at the interface between the exposed face Si, S2 of the assembly to be fractured 5 and the absorbent element 6a, 6b. In a next step d), the fracture assembly 5, provided with one or more absorbent elements 6a, 6b, is then subjected to an embrittlement heat treatment. As explained above, this heat treatment weakens the first substrate 1 at its embrittlement plane 2, and provides sufficient energy for the fracture wave, once initiated, to spread in a self-sustaining manner. This heat treatment typically is between 150 ° C and 600 ° C for a period of 30 minutes to 8 hours, such as for 4 hours at 400 ° C. In a first implementation variant, the heat treatment is sufficient on its own to initiate the fracture wave. At the end of the heat treatment, the useful layer 3 is completely detached from the first substrate 1. In a second variant embodiment, an external force is exerted, during or after the heat treatment, to initiate the fracture wave. . This external force may be of mechanical origin or any other origin. It may be for example a localized heating performed by a laser, or an ultrasonic energy supply. Upon application of the heat treatment, pressure may be optionally exerted on the fracture assembly 5 and the absorbent member 6a, 6b, so as to increase their contacting surfaces and place this assembly in a condition of intimate contact. This pressure can be exerted via an equipment in which the assembly is placed. Whatever the variant implemented, and once initiated, the fracture wave propagates in a self-sustaining manner to detach and transfer the useful layer 2 to the support 4, as represented in step e) of FIG. 4 .
    [0013] According to the invention, the acoustic vibrations emitted during the initiation and / or the propagation of the fracture wave are picked up and absorbed by the absorbent element 6a, 6b. As a result, the interaction of these acoustic vibrations with the fracture wave is limited and the useful layer has a periodic pattern of variation of reduced amplitude thickness. As such, FIG. 2 shows, in dashed line, a thickness variation profile (in Angstrom) along a diameter of a silicon-on-insulator wafer 300 mm in diameter obtained by application of the invention, absorbent member 6a, 6b being made of a 3mm thick polyurethane foam and fixed via a PVDC film. The amplitude of the thickness variations is less than 0.1 nm. This profile is to be compared with the solid line profile of the same FIG. 2, in which the thickness variations obtained under the same conditions, but without application of absorbent element 6a, 6b, were more than 0.3 nm.
    [0014] In a last step f) (not shown) of the process, the absorbent element 6a, 6b is removed, and in particular the absorbent element positioned on the face S2 of the support 4.
    [0015] Before or preferably after this step of withdrawal, it is possible to apply to the useful layer 3 any finishing step (smoothing heat treatment, thinning by sacrificial oxidation or etching, etc.) to complete the manufacture of the final structure. In a second embodiment of the structure, shown in FIG. 5, the absorbent element or elements 6a, 6b are placed in intimate contact with the exposed faces S1, S2 of the first substrate 1 and / or of the support 4, before step c) of applying the support 4 to the surface of the first substrate 1.
    [0016] According to a third embodiment, represented in FIG. 6, and particularly advantageous, the absorbent elements 6a, 6b are placed in intimate contact with the exposed faces Si, S2 of the element to be fractured, after the treatment step c) thermal embrittlement and before the step of initiation and propagation of the fracture wave. In this case, the initiation of the fracture wave is caused, after the heat treatment and once the absorbent element 6a, 6b is positioned, by applying an external force, for example by applying a blade L to 2. This third embodiment has the advantage of not exposing the absorbent elements 6a, 6b to the heat treatment embrittlement, which could lead otherwise to degrade, or to make their removal more difficult at the end of the process.
    [0017] By limiting the amplitude of the periodic pattern of thickness variation of the useful layer 3, the invention finds particular application for the manufacture of a structure comprising a useful layer 3 of lower thickness, after finishing, at 50 nm or 10 nm. Indeed for this thickness, the contribution of the thickness variations related to the periodic profile treated by the invention (of the order of nm) is significant. The invention is also of particular interest when the first substrate 1, from which the useful layer 3 is derived, has a large dimension (200 mm, 300 mm, 450 mm), for which the fracture wave propagation effects and acoustic vibrations are more marked. The invention may also relate to the manufacture of a silicon-on-insulator wafer, the first substrate 1 then consisting of an oxidized silicon wafer, the support 4 consisting of a silicon wafer. The following examples thus illustrate the invention, applied to the manufacture of such a silicon-on-insulator structure. In a first example, the absorbent element 6a, 6b is formed of a very thick silicon wafer (1 cm) provided on one of its faces with a 20 micron film of elastomer (non-adhesive) of Young's modulus less than 5GPa. Such an absorbent element 6a, 6b is associated, on the side of the elastomeric film, with each of the exposed faces Si, S2 of the element to be fractured 5, the latter having already undergone the embrittlement heat treatment. Pressure exerted on the exposed surfaces of the assembly ensures the intimate contact between the absorbent element 6a, 6b and the assembly to be fractured. The tuning of the acoustic impedances between the element to be fractured and the absorbing elements 6a 6b is ensured because they are made of the same material and the elastomeric layer is thin enough to be acoustically transparent. The acoustic vibrations emitted are dissipated in the mass of the absorbent elements 6a, 6b. An external force, such as the insertion of a blade at the weakening plane, initiates the fracture wave and its self-sustaining propagation. After removing the pressure ensuring the intimate contact of the absorbent elements 6a, 6b, they are removed without difficulty, the structure having not been exposed to temperature.
    [0018] In a second example, the thick and bare silicon wafers, that is to say without the elastomeric film of the previous example, are previously prepared to present a roughness surface of less than 0.5 nm. They are then assembled by molecular adhesion to the first silicon substrate and to the silicon support 4 before the step of applying the support 4 to the surface of the first substrate 1. The process continues, and in the context of this example, initiation of the fracture wave is obtained during the heat treatment step which consists of applying a temperature of 500 ° C for 1 hour. After fracture, the absorbent elements 6a, 6b of the exposed faces Si, S2 of the first substrate 1 and of the support 4 are removed by introducing a blade at the level of the adhesion interfaces. In this example, the absorbent elements 6a, 6b are exposed to embrittlement heat treatment. This is made possible because no temperature-degrading film has been used to establish intimate contact. In a third example, the absorbent element 6a, 6b consists of a PVDC film to which a layer of about 3mm of polyurethane foam (having a density of 40%) electrostatically adheres. The absorbent element 6a, 6b has the same dimensions as the first substrate 1 and the support 4. At least one absorbent element is electrostatically fixed on at least one of the exposed faces Si, S2 of the assembly to be fractured. , according to the same sequence as in the first example. The PVDC film ensures the intimate contact between the absorbent element 6a, 6b and respectively the first substrate 1 and the support 4. The adhesion force remains nevertheless low so that after the fracture step, it is easy to remove the absorbent elements 6a, 6b. In addition, the polyurethane foam, having a significant loss factor greater than 0.01, is particularly well suited to dissipate acoustic vibrations captured. A relatively thin thickness of a few mm is sufficient to significantly reduce the amplitude of the periodic profile of thickness variation of the useful layer 3.
    [0019] In a last example, the absorbent element 6a, 6b is formed of a sandwich configuration consisting for example of a stack of 10 to 20 successive layers comprising repeatedly, a first polymer adhesive film of about 100 microns. thickness and aluminum foil 10 about 100 microns as well. The stack has a total thickness of between 1 and 5 mm. This absorbent element 6a, 6b is positioned in intimate contact with the exposed faces S1, S2 of the fracture assembly 5, via the surface polymer layer of the absorbent member 6a, 6b. This absorbent element 6a, 6b has a significant loss factor, much greater than 0.01, the acoustic vibration causing indeed a shear of the polymer layers, driven by the relatively rigid sheets of aluminum. This particular configuration of the absorbent element 6a, 6b leads to a particularly efficient dissipation of the transmitted acoustic power. As a result, the amplitude of the periodic pattern of thickness variation of the useful layer is particularly small.
    [0020] Of course, the invention is not limited to the embodiments described and variations can be made without departing from the scope of the invention as defined by the claims. 30
    权利要求:
    Claims (21)
    [0001]
    REVENDICATIONS1. A method of transferring a useful layer (3) onto a support (4) comprising the following steps of: - forming an embrittlement plane (2) by implanting light species into a first substrate (1), so as to forming a useful layer (3) between this plane and a surface of the first substrate (1); applying the support (4) to the surface of the first substrate (1) to form a fracturing assembly (5) having two exposed faces (S1, S2); embrittlement heat treatment of the assembly to be fractured (5); initiation and self-propagating propagation of a fracture wave in the first substrate (1) along the weakening plane (3); the method being characterized in that at least one of the faces (S1, S2) of the assembly to be fractured (5) is in intimate contact, on a contact zone, with an absorbent element (6a, 6b) adapted to capture and dissipate acoustic vibrations emitted during the initiation and / or propagation of the fracture wave.
    [0002]
    The method of claim 1, wherein the acoustic vibrations have a main frequency, and the absorbing element (6a, 6b) is selected to pick up and dissipate the acoustic waves at that main frequency.
    [0003]
    3. Method according to claim 1 or 2, wherein the contact zone extends over part of the extent of the face (S1, S2) of the assembly to be fractured.
    [0004]
    4. The method according to claim 3, wherein the contact zone is positioned on the face (S1, S2) of the assembly to be fractured (5) with respect to the zone of initiation of the fracture wave.
    [0005]
    5. A process according to any one of the preceding claims, wherein the embrittlement heat treatment is between 150 ° C and 600 ° C for a period of 30 minutes to 8 hours.
    [0006]
    6. Method according to one of the preceding claims, wherein the initiation of the fracture wave is obtained during the embrittlement heat treatment step.
    [0007]
    7. Method according to one of the preceding claims, wherein the initiation of the fracture wave is obtained by applying a mechanical force at the weakening plane.
    [0008]
    8. Method according to the preceding claim, wherein the absorbent element (6a, 6b) is in intimate contact with the face (S1, S2) of the assembly to be fractured (5) after the heat treatment step and before the step of initiation of the fracture wave by applying a mechanical force.
    [0009]
    The method of any of the preceding claims, wherein after the step of initiating and propagating the fracture wave, the absorbent member (6a, 6b) is removed.
    [0010]
    10. Method according to any one of the preceding claims, wherein a first and a second absorbent elements (6a, 6b) are disposed on each of the faces (S1, S2) of the assembly to be fractured (5).
    [0011]
    11. Method according to any one of the preceding claims, wherein the face (Si) of the assembly to be fractured (5) is in intimate contact, on the side of the first substrate (1), with the first absorbent element (6a). having an acoustic impedance tuned to the acoustic impedance of the first substrate (1).
    [0012]
    12. The method of claim 10, wherein the face (S2) of the assembly to be fractured (5) is in intimate contact, on the side of the support (4), with the second absorbent element (6b) having a given acoustic impedance to the acoustic impedance of the support (4).
    [0013]
    13. A method according to any one of the preceding claims, wherein the intimate contact between the face (S1, S2) of the assembly to be fractured (5) and the absorbent element (6a, 6b) is obtained via a film (7a, 7b) disposed between the assembly to be fractured (5) and the absorbent element (6a, 6b).
    [0014]
    14. Method according to the preceding claim, wherein the film (7a, 7b) consists of an adhesive material.
    [0015]
    15. The method of claim 13, wherein the film adheres electrostatically to the face (S1, S2) of the assembly to be fractured (5) and the absorbent element (6a, 6b).
    [0016]
    The method of claim 13 wherein the film is a non-adhesive, low Young's modulus material less than 5GPa.
    [0017]
    17. A method according to any one of the preceding claims, wherein the intimate contact between the face (S1, S2) of the assembly to be fractured (5) and the absorbent element (6a, 6b) is obtained by application of a pressure on the absorbent element (6a, 6b).
    [0018]
    18. The method as claimed in any one of the preceding claims, in which the face (S1, S2) of the assembly to be fractured (5) and the absorbent element (6a, 6b) have a surface roughness of less than 0.5 nm. ; the intimate contact between the face (S1, S2) of the assembly to be fractured (5) and the absorbent element (6a, 6b) is obtained by their direct assembly.
    [0019]
    The method of any one of the preceding claims, wherein the absorbent member (6a, 6b) is made of a material having a significant loss factor greater than 0.01.
    [0020]
    20. Method according to the preceding claim, wherein the absorbent element (6a, 6b) is composed of a viscoelastic material or a composite material or a sandwich configuration.
    [0021]
    21. Method according to any one of the preceding claims, wherein the absorbent element (6a, 6b) has a thickness greater than 1 mm.
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    同族专利:
    公开号 | 公开日
    US20150303098A1|2015-10-22|
    US9589830B2|2017-03-07|
    JP2015213161A|2015-11-26|
    TW201611085A|2016-03-16|
    TWI648765B|2019-01-21|
    KR102333997B1|2021-12-02|
    EP2933828B1|2016-10-19|
    DK2933828T3|2017-01-23|
    CN105023876A|2015-11-04|
    EP2933828A1|2015-10-21|
    FR3020175B1|2016-05-13|
    SG10201503005RA|2015-11-27|
    KR20150119822A|2015-10-26|
    JP6481202B2|2019-03-13|
    CN105023876B|2019-05-17|
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    法律状态:
    2015-03-19| PLFP| Fee payment|Year of fee payment: 2 |
    2016-03-23| PLFP| Fee payment|Year of fee payment: 3 |
    2017-03-22| PLFP| Fee payment|Year of fee payment: 4 |
    2018-03-22| PLFP| Fee payment|Year of fee payment: 5 |
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    2021-03-25| PLFP| Fee payment|Year of fee payment: 8 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1453400A|FR3020175B1|2014-04-16|2014-04-16|METHOD OF TRANSFERRING A USEFUL LAYER|FR1453400A| FR3020175B1|2014-04-16|2014-04-16|METHOD OF TRANSFERRING A USEFUL LAYER|
    DK15162329.5T| DK2933828T3|2014-04-16|2015-04-02|Method of transferring a usable layer|
    EP15162329.5A| EP2933828B1|2014-04-16|2015-04-02|Method for transferring a useful layer|
    JP2015076933A| JP6481202B2|2014-04-16|2015-04-03|Method for transferring useful layer|
    US14/686,229| US9589830B2|2014-04-16|2015-04-14|Method for transferring a useful layer|
    CN201510177940.2A| CN105023876B|2014-04-16|2015-04-15|The method for shifting useful layer|
    TW104112125A| TWI648765B|2014-04-16|2015-04-15|Method for transferring a useful layer|
    SG10201503005RA| SG10201503005RA|2014-04-16|2015-04-16|Method For Transferring A Useful Layer|
    KR1020150054032A| KR102333997B1|2014-04-16|2015-04-16|Method for transferring a useful layer|
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